作者: K. Ogasawara , F. Allegrini , M. I. Desai , S. Livi , D. J. McComas
关键词:
摘要: We investigated the response linearity and energy resolution of a silicon based reach-through avalanche photodiode (APD) for low ions ranging from 5 keV to 250 keV. found that space charge affects APD gain, this could be compensated by applying simple correction formula measured pulse height distributions. The comparison between former theoretical or experimental studies our results showed there was no evidence additional performance degradation within tested range in terms compared conventional non-avalanching detectors. Thanks noise level (equivalent 0.9 silicon) at room temperature even large detection area (15 mm2), APDs would potentially used low-energy various environments such as plasma physics, particle many industrial applications.