High-speed transparent refresh DRAM-based memory cell
作者： Simon J. Lovett
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摘要: A high-speed transparent refresh DRAM-based memory cell and architecture are disclosed. Each consists of 4 transistors configured to incorporate differential data storage (i.e., storing a true logic state complementary state), with each pair having dual port configuration forming one nodes for the cell. is coupled 2 wordlines digit lines. Since stores data, since LOW rewritten given faster than HIGH rewritten, known be state. As result, both states independently writing
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