作者: Dongping Zhang , Ping Fan , Congjuan Wang , Xingmin Cai , Guangxing Liang
DOI: 10.1016/J.OPTLASTEC.2008.11.010
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摘要: Abstract HfO2 thin films were prepared in dual-ion-beam reactive sputtering (DIBRS) method. Spectrophotometer, surface thermal lensing (STL) technique, Rutherford backscattering (RBS), and X-ray diffraction (XRD) employed measuring the transmittance, absorptance, stoichiometry, microstructure, respectively. Experimental results indicate that peak transmittance value of sample is about 90%. Weak absorptance measurement for 1064 nm wavelength laser by STL technique investigated absorption 180 ppm as-grown sample, which larger than expected. Substoichiometry main cause could be proved RBS annealing test results. XRD result shows are polycrystalline, monoclinic dominant phase.