Effect of light soaking on the electrical properties of the Ge0.20Te0.75Bi0.05 glass system
作者： M Fadel , K Sedeek , F Abd El-Salam
DOI: 10.1016/0040-6090(95)08212-3
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摘要: Abstract The dependence of the electrical conductivity, measured either in darkness or after exposure to different durations light, on temperature and time have been studied for Ge 0.20 Te 0.75 Bi 0.05 thin films thicknesses. conductivity showed an initial gradual decrease with time, ending saturation. activation energy was found increase by increasing period light soaking. results were explained basis saturation vacant states which bend band edges at semiconductor-metal interface.
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