Metal plating using seed film
作者： Eugene P. Marsh
DOI:
关键词:
摘要: A seed film and methods incorporating the in semiconductor applications is provided. The includes one or more noble metal layers, where each layer of layers no greater than a monolayer. also either conductive oxide silicon can be used plating, including electroplating, over at least portion film. Conductive formed with fabricating an integrated circuit, capacitor structures circuit.
google.com.sa 参考文章(32)
Leonard Forbes, Kie Ahn, Copper electroless deposition technology for ULSI metalization ,(2001)
David J. Kubista, Philip H. Campbell, Apparatus and process of improving atomic layer deposition chamber performance ,(2002)
Kwon Hong, Hyung-Bok Choi, Method for fabricating a capacitor in a semiconductor device ,(2001)
Suvi Haukka, Kai-Erik Elers, Pekka J. Soininen, Method of growing electrical conductors by reducing metal oxide film with organic compound containing -OH, -CHO, or -COOH ,(2001)
Brian A. Vaartstra, Precursor chemistries for chemical vapor deposition of ruthenium and ruthenium oxide ,(1998)
Carl Galewski, Sergey D. Lopatin, Takeshi T. N. Nogami, Method of copper interconnect formation using atomic layer copper deposition ,(2000)
Jeong-hee Chung, In-sung Park, Jae-hyun Yeo, Methods of forming an integrated circuit capacitor in which a metal preprocessed layer is formed on an electrode thereof ,(2002)
Garo J. Derderian, Gurtej Sandhu, Ald method to improve surface coverage ,(2001)
Hayashi Otsuki, Kimihiro Matsuse, Method of forming a barrier film and method of forming wiring structure and electrodes of semiconductor device having a barrier film ,(2002)
Paul H. Berdahl, Richard E. Russo, Ronald P. Reade, Particle beam biaxial orientation of a substrate for epitaxial crystal growth ,(2000)