In situ electron backscattered diffraction of individual GaAs nanowires.
作者： S.V. Prikhodko , S. Sitzman , V. Gambin , S. Kodambaka
DOI: 10.1016/J.ULTRAMIC.2008.09.006
关键词:
摘要: We suggest and demonstrate that electron backscattered diffraction, a scanning microscope-based technique, can be used for non-destructive structural morphological characterization of statistically significant number nanowires in situ on their growth substrate. obtain morphological, crystal phase, orientation information individual GaAs the substrate GaAs(111) B. Our results, verified using transmission microscopy selected area diffraction analyses same set wires, indicate most wires possess wurtzite structure with high density thin defects aligned normal to wire axis, while others grow defect-free zincblende structure. The demonstrated approach is general, applicable other material systems, expected provide important insights into role nanowire crystallinity orientation.
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