Electrochemically deposited p–n homojunction cuprous oxide solar cells
作者： Kunhee Han , Meng Tao
DOI: 10.1016/J.SOLMAT.2008.09.023
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摘要: Abstract The electrical properties of both p- and n-type cuprous oxide (Cu 2 O) films electrochemically deposited from two electrolyte solutions were examined by current–voltage measurements. resistivity p-type Cu O varied 3.2×10 5 to 2.0×10 8 Ω cm, while that 2.5×10 7 8.0×10 depending on deposition conditions such as solution pH, potential temperature. With optimized for minimum resistivity, p–n homojunction solar cells fabricated a two-step process. showed conversion efficiency 0.1% under AM1 illumination. low is attributed the high O, which require doping reduce.
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