Graphene field-effect transistor application-electric band structure of graphene in transistor structure extracted from quantum capacitance

摘要: Recently, various two-dimensional (2D) materials, such as graphene, transition metal dichalcogenides and so on, have attracted much attention in electron device research. The most important characteristic of graphene is its highest mobility all semiconductor channels at room temperature. However, it obvious that more than a good required to realize the field effect transistor (FET), intense arguments from points view are necessary. In this paper, issues with Si-metal oxide FETs (Si-MOSFET) advantage 2D materials discussed. present state respect gate stack formation band gap engineering reported. Moreover, based on density states (DOS) extracted using quantum capacitance (CQ) measurement, shown electric structure contact insulators or electrode deviates intrinsic structure.