In situ transmission electron microscopy study of thermal-stress-induced dislocations in a thin Cu film constrained by a Si substrate
DOI: 10.1016/S0921-5093(00)01703-2
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摘要: Abstract Thermal-stress-induced dislocation motion in a Cu film on an amorphous SiNx (a-SiNx) passivated Si substrate was investigated by situ transmission electron microscopy (TEM). Plan-view, TEM experiments revealed relatively constant density of 3.4×10 9 –5.9×10 cm −2 throughout thermal cycling. However, strongly temperature dependent. At elevated temperatures moved continuously, while at below ∼220°C became jerky with projected mean free path ∼70 nm. Furthermore, cross-sectional specimens that dislocations were attracted and pulled into the Cu/a-SiNx interface, where upon contrast disappeared. The limited mobility observed low homologous may contribute to high yield stress films.
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