Quantitative electron spectroscopic imaging studies of microelectronic metallization layers.
作者： MARIEN , PLITZKO , SPOLENAK , KELLER , MAYER
DOI: 10.1046/J.1365-2818.1999.00476.X
关键词:
摘要: The combination of focused ion beam (FIB) sample preparation and quantitative electron spectroscopic imaging is an ideal tool for the investigation layered structures used in microelectronic metallization schemes. In present work, Si3N4/Cu/Si3N4/SiO2/Si Al/TiN/Ti/SiO2/Si layers produced by physical vapour deposition are investigated. We apply series energy filtered images low loss region a mapping thickness which makes it possible to refine parameters FIB process. also show how core can be obtain elemental distribution chemical bonding information on these samples nanometre scale. For materials with small grain size and/or strong variation Bragg orientation, intensity map strongly influenced superimposed contrast. This detrimental effect reduced greatly using hollow cone illumination, as demonstrated polycrystalline Cu. One striking feature observed Cu prepared strong, regularly arranged contrast variations caused subsurface defects grains. suppose that consequence interaction Ga atoms from
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