Thermal stability of amorphous Ti 3 Si 1 O 8 thin films

摘要: Abstract Films (220 nm-thick) deposited by reactive rf sputtering from a Ti 3 Si target with an argon/oxygen gas mixture were annealed for 30 min in vacuum at temperatures between 400 and 900°C. The films characterized 2 MeV He 2+ backscattering spectrometry X-ray diffraction to monitor thermally induced changes. As-deposited, the are X-ray-amorphous. First signs of crystallization appear 600°C. Their composition remains constant uniform throughout that temperature range, except loss argon is initially present film concentration about 1 at.% fully escapes within 5 650°C. without silicon obtained pure titanium oxygen O also X-ray-amorphous but crystallize much more readily. significance these results discussed relative other ternary analogous compositions tend form highly stable amorphous or near-amorphous phases (‘mictamict’ alloys).