Effect of magnetic field on the electrical resistance of Tl-1223 doped by Zn and Ni
作者： R Awad , N.S Aly , I.H Ibrahim , A.I Abou-Aly , A.I Saad
DOI: 10.1016/S0921-4526(01)00971-1
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摘要: Abstract The electrical resistance of (Tl1−xMx)Ba2Ca2Cu3O9−δ, where M=Zn and Ni x ranges from 0 to 0.6, is measured under the influence weak magnetic fields up 4.4 kG. data show that field does not affect first stage transition, while second transition affected by field. width ΔT broadened on increasing applied Ni-doped samples are more than Zn-doped samples. activation energy calculated fitting in according Arrhenius law as a function dopant contents.
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