作者: Wolfgang Hoenlein , Siegfried Schwarzl
DOI:
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摘要: A method used in manufacturing a cubically integrated circuit arrangement. silicon wafer, wherein through pores are produced by electrochemical etching insulated from the and provided with conductive fills, is secured as carrier plate (24) to substrate (21) that has components Terminal pads (25) electrically connected fills arranged on surface of thereby meet contacts (23) at adjoining firmly thereto.