Gallium vacancies and gallium antisites as acceptors in electron-irradiated semi-insulating GaAs.
作者： C. Corbel , F. Pierre , K. Saarinen , P. Hautojärvi , P. Moser
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摘要: Positron-lifetime measurements show that acceptors are produced in semi-insulating GaAs by 1.5-MeV electron irradiation at 20 K. Two types of can be separated. The first ones negative vacancy-type defects which anneal out over a very broad range temperature between 77 and 500 second ion-type stable still 450 data these two independent do not form close pairs. We attribute both to gallium-related defects. identify the as isolated gallium antisites. identified vacancies or involved negatively charged complexes. introduction rate antisite is estimated 1.8\ifmmode\pm\else\textpm\fi{}0.3 ${\mathrm{cm}}^{\mathrm{\ensuremath{-}}1}$ fluence ${10}^{17}$--${10}^{18}$ ${\mathrm{cm}}^{\mathrm{\ensuremath{-}}2}$ for
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