Elastic properties of sub-stoichiometric nitrogen ion implanted silicon
作者： M.F. Sarmanova , H. Karl , S. Mändl , D. Hirsch , S.G. Mayr
DOI: 10.1016/J.NIMB.2015.02.073
关键词:
摘要: Abstract Elastic properties of sub-stoichiometric nitrogen implanted silicon were measured with nanometer-resolution using contact resonance atomic force microscopy (CR-AFM) as function ion fluence and post-annealing conditions. The determined range indentation moduli was between 100 180 GPa depending on the annealing duration content. high can be explained by formation Si–N bonds, verified X-ray photoelectron spectroscopy.
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