Inverse bilayer magnetoelectric thin film sensor
作者： Erdem Yarar , S Salzer , V Hrkac , A Piorra , M Höft
DOI: 10.1063/1.4958728
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摘要: Prior investigations on magnetoelectric (ME) thin film sensors using amorphous FeCoSiB as a magnetostrictive layer and AlN piezoelectric revealed limit of detection (LOD) in the range few pT/Hz1/2 mechanical resonance. These are comprised Si/SiO2/Pt/AlN/FeCoSiB stack, dictated by temperatures required for deposition layers. A low temperature route very high quality allows reversal sequence, thus allowing to be deposited smooth Si substrate. As consequence, LOD could enhanced almost an order magnitude reaching 400 fT/Hz1/2 at resonance sensor. Giant ME coefficients (αME) 5 kV/cm Oe were measured. Transmission electron microscopy highly c-axis oriented growth starting from Pt-AlN interface with local epitaxy.
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