A low-temperature thin-film electroplated metal vacuum package
作者： B.H. Stark , K. Najafi
DOI: 10.1109/JMEMS.2004.825301
关键词:
摘要: This paper presents a packaging technology that employs an electroplated nickel film to vacuum seal MEMS structure at the wafer level. The package is fabricated in low-temperature (<250/spl deg/C) 3-mask process by electroplating 40-/spl mu/m-thick over 8-/spl mu/m sacrificial photoresist removed prior sealing. A large fluidic access port enables 800/spl times/800 /spl be released less than three hours. device release performed after formation of first level package. maximum fabrication temperature 250/spl deg/C represents lowest ever reported for thin packages (previous low sim/400/spl deg/C). Implementation electrical feedthroughs this requires no planarization. Several mechanisms, based upon localized melting and Pb/Sn solder bumping, sealing resistance have been investigated. has with integrated Pirani gauge further characterize different technologies. These gauges used establish hermeticity technologies measured pressure sim/1.5 torr. Short-term (/spl sim/several weeks) reliability data also presented.
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