Role of nitrogen incorporation into Al2O3-based resistive random-access memory
作者： Moon Young Yang , Katsumasa Kamiya , Hiroki Shirakawa , Blanka Magyari-Köpe , Yoshio Nishi
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摘要: We theoretically study the role of nitrogen incorporation into Al2O3-based resistive random-access memory (ReRAM) by using first-principles calculations. In ReRAM devices, oxygen vacancy (VO) has been believed to be origin ON–OFF switching. reveal that VO formation energy is significantly reduced Al2O3, resulting in a forming-free device. Moreover, atoms tend favorably couple with vacancies, stabilizing conductive filament suppression diffusion. Accordingly, improves quality devices.
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