Gallium nitride containing laser device configured on a patterned substrate
作者： James W. Raring , Mathew C. Schmidt , Melvin McLaurin , Christiane Elsass , Thiago P. Melo
DOI:
关键词:
摘要: A gallium and nitrogen containing laser diode device. The device has a substrate material comprising surface region. region is configured on either non-polar crystal orientation or semi-polar orientation. recessed formed within second of the material, being between first third to block plurality defects from migrating an epitaxially overlying substantially free active
lens.org 参考文章(226)
Jung Yoon, Four parts manhole enabling an easy install and height adjustment ,(2005)
Michael A. Kneissl, Blue and green laser diodes with gallium nitride or indium gallium nitride cladding laser structure ,(2005)
Richard D. Pering, David Andrew King, Frederick A. Stawitcke, Shahida Rana, Richard J. Pittaro, Edward Verdonk, Optical excitation/detection device and method for making same using fluidic self-assembly techniques ,(2002)
Eiryo Takasuka, Takashi Kyono, Katsushi Akita, Masaki Ueno, Masahiro Nakayama, Kouhei Miura, GaN substrate and method of fabricating the same, nitride semiconductor device and method of fabricating the same ,(2004)
Christiane Poblenz, James Raring, Rajat Sharma, Multi color active regions for white light emitting diode ,(2010)
Chiaki Sasaoka, Group-III nitride semiconductor device ,(2004)
Jo S. Major, Hanmin Zhao, Stephen O'Brien, Optical semiconductor device with diffraction grating structure ,(1997)
Christian Gerri, Philippe Hemeury, Aircraft nacelle incorporating a hood closure device that is independent of the locking mechanism ,(2010)
Petar Atanackovic, Method of forming a rare-earth dielectric layer ,(2005)