End point control in plasma etching
作者： William D. Westwood , Robert G. Poulsen , Gerald M. Smith
DOI:
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摘要: The end point in plasma etching is detected by monitoring the optical emission from plasma, selecting a particular line and detecting substantial variation intensity of emission. This indicates change material being etched thus completion one material, or beginning another material. It also applicable to removing, etching, photoresist
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