Semiconductor device having barrier layer between ruthenium layer and metal layer and method for manufacturing the same
作者： Hee-sook Park , Seung-Hwan Lee , Yun-jung Lee , Gil-heyun Choi
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摘要: A method for fabricating a semiconductor device is provided. ruthenium layer formed on substrate in processing chamber. barrier the supplying halide-free precursor metal such as an aluminum layer, alloy tungsten or copper layer. The one of TiN TaN WN and MoN by using MOCVD process ALD process, titanium compound selected from group consisting pentakis(diethylamino) titanium, tetrakis(diethylamino) tetrakis(dimethylamino) pentakis(dimethylamino) titanium. tantalum t-butyltrikis(diethylamino) tantalum, tantalum.
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