Semiconductor capacitive device
作者： Masaaki Nakabayashi , Tetsuro Tamura , Hideyuki Noshiro
DOI:
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摘要: The present invention relates to semiconductor techniques using high dielectric oxides, more specifically a thin film forming method for which is suitable as the electrodes of oxide dielectrics, capacitor device dielectrics and fabricating same, an device. includes at least one pair formed material containing titanium nitride (200) orientation. This permits have good quality even in case that grown oxidizing atmosphere. film, whereby can be patterned by RIE, much improves processing precision electrode patterning, throughputs.
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