High-resolution imaging of silicon (111) using a 100 keV STEM
作者： Peirong XU , Earl J. Kirkland , John Silcox , Robert Keyse
DOI: 10.1016/0304-3991(90)90027-J
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摘要: Abstract Atomic-resolution conventional electron microscopy has become routinely possible at elevated voltages (200–400 keV). However, many specimens are sensitive to damage these (the silicon knock-on threshold energy is 120–190 keV), hence there incentive go lower voltage. Silicon (111) lattice imaging 1.92 A resolution with a 100 keV STEM in both axial bright-field (BF) and annular dark-field (ADF) mode using an ultra-high-resolution objective lens pole piece ( C s = 0.7 mm ) been achieved, the results presented here. Although had anticipated, was unexpected interpreted as arising from third transfer band of contrast function.
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