Raman studies of steric hindrance and surface relaxation of stepped H-terminated silicon surfaces.
作者： Melissa A Hines , Yves J Chabal , Timothy D Harris , Alexander L Harris , None
DOI: 10.1103/PHYSREVLETT.71.2280
关键词:
摘要: Polarized angle-resolved Raman spectra of the Si-H stretching vibrations on stepped H-terminated Si(111) surfaces confirm constrained orientation step dihydride derived from ab initio cluster calculations. They further show that normal modes involve little concerted motion atoms, indicating relaxation reduces steric interaction much than predicted.
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