Depth distributions of sputtered atoms

作者: V.I. Shulga

DOI: 10.1016/S0168-583X(98)00955-0

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摘要: Abstract The computer code OKSANA is applied to calculate the depth of origin atoms sputtered from an amorphous Si target under ion bombardment. Most simulations refer 2 keV Ne emphasis put on comparison distributions found by simulation with profiles predicted analytical theory which known overestimate mean escape depth. It has been shown that failing include coarse-grain structure and some simplifying assumptions concerning generation transport recoils are main reasons for high theoretical values

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