A+Light-Induced+Tunneling+State+In+a+Submicron+Double+Barrier+Tunneling+Diode+With+a+Center-Doped+Well
作者： Y.W Suen , C.C Young , C.J Chang , J.C Wu , S.Y Wang
DOI: 10.1016/S1386-9477(99)00166-6
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摘要: Abstract We will present the observation of a light-induced meta-stable impurity state in submicron center-doped double barrier tunneling diode (DBRTD) manufactured by novel single-step e-beam lithography process which no further alignment for interconnect between bonding pad and small active device region is required. attribute state, can be switched light high voltage bias, to light- or field-induced charge redistribution region.
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