Evolution of crystallographic ordering in Hf1-xAlxOy high-κ dielectric deposited by atomic layer deposition

作者: C. Wiemer , M. Fanciulli , B. Crivelli , G. Pavia , M. Alessandri

DOI: 10.1063/1.1635962

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摘要: The evolution of the morphology and crystallographic ordering hafnium aluminates deposited by atomic layer deposition has been investigated. Annealing at temperatures as high 900 °C in N2 or O2 atmosphere is found to promote crystallization high-κ layer, together with growth an interfacial low-κ oxide. phase identified indexation transmission electron microscopy selected area diffraction patterns Rietveld refinement grazing incidence x-ray diffractograms. κ crystallize orthorhombic ternary Hf1−xAlxO2 even for Al content x=0.74. temperature higher Al-richer alloy. thickness electronic density are evaluated combining cross-sectional reflectivity analysis.

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