Improved measurements of doping profiles in silicon using CV techniques
作者： I.G. McGillivray , J.M. Robertson , A.J. Walton
DOI: 10.1109/16.2437
关键词:
摘要: One of the problems doping profile measurements using CV techniques is that numerical differentiation required. This can, under certain circumstances, result in very noisy profiles. A method presented for obtaining noise-free profiles by choosing a step size takes account resolution capacitance meter to ensure maximum detail retained. range other factors can affect profiling accuracy also reviewed. >
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sci-hub.se 参考文章(12)
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