Oxidation of aluminium nitride substrates

摘要: The growth of oxide films on two types aluminium nitride substrates different origin has been studied as a function temperature. At given set oxidation reaction parameters, the layers grown with relatively large grain size and high concentrations Y-Al-O-based liquid sintering aid phases (type I substrates) were observed to be thicker more diffuse than those obtained an average particle approximately 3 μm low II substrates). effects oxygen partial pressure variation film have investigated for type AIN substrates. kinetics such analysed determined fit best linear rate law. This law indicates that rate-limiting step in high-quality is interface reaction-controlled process.