Anomalies in the low-temperature thermoelectric power of p-Bi2Te3 and Te associated with topological electronic transitions under pressure
作者： E. S. Itskevich , L. M. Kashirskaya , V. F. Kraidenov
DOI: 10.1134/1.1187126
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摘要: Thermoelectric power measurements have been carried out for the narrow-band semiconductors p-Bi2Te3 and Te under pressures up to 2.5 GPa at liquid-helium temperatures. The dependences observed correlate with data obtained by oscillation methods. These correlations allow one use thermoelectric search topological electronic transitions in semiconductors.
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