Chamber configuration for confining a plasma
作者： Mukund Srinivasan , Jian J. Chen , Eric H. Lenz
DOI:
关键词:
摘要: A plasma confining assembly for minimizing unwanted formations in regions outside of a process region chamber is disclosed. The includes first element and second positioned proximate the periphery region. spaced apart from element. an exposed conductive surface that electrically grounded insulating surface, which configured covering portion grounded. substantially reduce effects forming components pass therebetween. Additionally, may include third element, formed material disposed between further reduces
lens.org 参考文章(17)
Philip Walko Ii Joseph, High conductance plasma containment structure ,(1997)
Evans Lee, Robert Wu, Hongching Shan, Adjustable dc bias control in a plasma reactor ,(1994)
Eric H. Lenz, Robert D. Dible, Plasma etching apparatus utilizing plasma confinement ,(1995)
Georges J. Gorin, Plasma reactor apparatus and method ,(1984)
Steven D. Downey, Robert Chow, Semiconductor etching apparatus with magnetic array and vertical shield ,(1986)
Paul Ernest Luscher, Bryan Pu, Evans Yip Lee, Michael D Welch, James David Carducci, Richard Blume, Robert W Wu, Hong Ching Shan, Adjusting DC bias voltage in plasma chamber ,(2001)
Mitsuaki Komino, Kazuhiro Tahara, Kosuke Imafuku, Masayuki Tomoyasu, Akira Koshiishi, Shosuke Endo, Keizo Hirose, Yukio Naito, Yoshio Sakamoto, Hiroshi Nishikawa, Hiroto Takenaka, Kazuya Nagaseki, Plasma treatment method and apparatus ,(2001)
Mikio Deguchi, Apparatus for producing semiconductor devices ,(1988)
Eric H. Lenz, Cam-based arrangement for positioning confinement rings in a plasma processing chamber ,(1999)