Method for manufacturing oxide film having high dielectric constant, capacitor having dielectric film formed using the method, and method for manufacturing the same

摘要: Provided are a method for manufacturing high k-dielectric oxide film, capacitor having dielectric film formed using the method, and capacitor. A is manufactured by (a) loading semiconductor substrate in an ALD apparatus, (b) depositing reaction material predetermined composition rate of first element second on substrate, (c) forming two elements oxidizing such that simultaneously oxidized. In this size apparatus reduced, productivity enhanced, costs lowered. Further, exhibits constant low leakage current trap density. Thus, including as also