作者: Jonah Erlebacher , Michael J. Aziz , Eric Chason , Michael B. Sinclair , Jerrold A. Floro
DOI: 10.1116/1.582127
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摘要: The time evolution of the amplitude periodic nanoscale ripple patterns formed on Ar+ sputtered Si(OOl ) surfaces was examined using a recently developed in situ spectroscopic technique. At sufficiently long times, we find that does not continue to grow exponentially as predicted by standard Bradley-Harper sputter rippling model. In accounting for this discrepancy, rule out effects related concentration mobile species, high surface curvature, energy anisotropy, and ion-surface interactions. We observe all wavelengths ceases when width topmost terrace ripples is reduced approximately 25 nm. This observation suggests short circuit relaxation mechanism limits . growth. A strategy influencing ultimate discussed.