作者: Eric Chason , Michael B Sinclair , Jerry A Floro , John A Hunter , Robert Q Hwang
DOI: 10.1063/1.121622
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摘要: We describe a light scattering technique for measuring the real-time evolution of thin film and surface morphology. By using spectroscopic detection, requires no motion sample during measurement, which makes it compatible with many processing geometries. Results from growth strained heteroepitaxial layers SixGe1−x on Si(001) are presented to demonstrate technique.