MOCVD growth of Bi2Te3 layers using diethyltellurium as a precursor
作者： A Giani , A Boulouz , F Pascal-Delannoy , A Foucaran , A Boyer
DOI: 10.1016/S0040-6090(97)00792-X
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摘要: Abstract The growth of Bi 2 Te 3 thin films by metal organic chemical vapour deposition (MOCVD) using diethytellurium and trimethylbismuth as tellurium bismuth sources respectively is investigated on pyrex substrates. results rate, morphology, electrical thermoelectrical properties a function parameters are given. prepared were always n -type. Film properties, such resistivity, mobility, carrier concentration, thermoelectric power X-ray diffraction studied at 300 K. For VI/V ratio greater than 6, we found an resistivity lower 9 μ Ω.m equal to 210 V/K. Hall mobility varies from 28 150 cm /V.s. These initial suggest significant potential MOCVD for large-scale production material.
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