Imaging of the silicon on sapphire interface by high‐resolution transmission electron microscopy
作者： Fernando A. Ponce , Julio Aranovich
DOI: 10.1063/1.92389
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摘要: The silicon‐sapphire interface of CVD silicon on a (1102) sapphire substrate has been studied by high‐resolution transmission electron microscopy. Cross‐section images the are presented where and lattices directly resolved. show that is planar abrupt to limit resolution (less than 3 A). Defect anisotropy evident can be linked tilt [100] direction layer with respect normal substrate.
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