MOVPE growth of AlGaInAs–InP highly tensile-strained MQWs for 1.3 μm low-threshold lasers
作者： J. Decobert , N. Lagay , C. Cuisin , B. Dagens , B. Thedrez
DOI: 10.1016/J.JCRYSGRO.2004.08.032
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摘要: The low-pressure metalorganic vapor-phase epitaxy (LP-MOVPE) of tensile AlGaInAs multi-quantum wells (MQWs) for transverse magnetic (TM) 1.3 μm emitting lasers is presented. Al-containing wells have been mostly studied with compressive strain for transverse electric (TE) lasers. In this study, we report on highly tensile-strained AlGaInAs well layers (− 0.72 to− 1.65%) grown with compressive-strained AlGaInAs barrier layers (0.64%). The good agreement of high-resolution X-ray curves and simulated curves indicates that good …
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