High Responsivity ${\rm a\!-\!Si}_{\rm x}{\rm Ge}_{1-{\rm x}}{\rm O}_{\rm y}:{\rm H}$ Microbolometers
作者： Mukti M. Rana , Donald P. Butler
关键词:
摘要: Microbolometers of a-Si0.15Ge0.85O.0.236:H were fabricated by radio frequency (RF) magnetron sputtering. A sandwich layer silicon nitride-silicon germanium oxide-silicon nitride was used. Surface micromachining used to fabricate the detectors into a suspended bridge structure. To reduce 1/f-noise, passivated at 250degC in forming gas. high temperature coefficient resistance (TCR) -4.8%/K obtained room temperature. Due observed photo generation below 2.5 mum wavelength, responsivity and detectivity measurements performed with long pass filter placed between infrared light source detectors. The highest 1.05times104 V/W 8.27times106 cm-Hz1/2/W from 40 times pixel. Lowest thermal conductance 4times10-8 while response time 3.44 ms.
harvard.edu
sci-hub.se 参考文章(15)
R. A. Wood, Uncooled Microbolometer Infrared Sensor Arrays Springer, Boston, MA. pp. 149- 175 ,(2001) , 10.1007/978-1-4615-1607-1_6
A. Mahmood, S. Dayeh, D.P. Butler, Z. Celik-Butler, Micromachined infrared sensor arrays on flexible polyimide substrates ieee sensors. ,vol. 2, pp. 777- 782 ,(2003) , 10.1109/ICSENS.2003.1279047
M. Garcı́a, R. Ambrosio, A. Torres, A. Kosarev, IR bolometers based on amorphous silicon germanium alloys Journal of Non-crystalline Solids. pp. 744- 748 ,(2004) , 10.1016/J.JNONCRYSOL.2004.03.082
J. J. Yon, A. Astier, S. Bisotto, G. Chamingis, A. Durand, J. L. Martin, E. Mottin, J. L. Ouvrier-Buffet, J. L. Tissot, First demonstration of 25 μm pitch uncooled amorphous silicon microbolometer IRFPA at LETI-LIR Infrared technology and applications XXXI (28 March-1 April 2005, Orlando, Florida, USA). ,vol. 5783, pp. 432- 440 ,(2005) , 10.1117/12.606487
Mukti M. Rana, Donald P. Butler, Radio Frequency sputtered Si1−xGex and Si1−xGexOy thin films for uncooled infrared detectors Thin Solid Films. ,vol. 514, pp. 355- 360 ,(2006) , 10.1016/J.TSF.2006.02.088
T. A. Enukova, N. L. Ivanova, Yu. V. Kulikov, V. G. Malyarov, I. A. Khrebtov, Amorphous silicon and germanium films for uncooled microbolometers Technical Physics Letters. ,vol. 23, pp. 504- 506 ,(1997) , 10.1134/1.1261727
L Dobrzański, E Nossarzewska-Orłowska, Z Nowak, J Piotrowski, Micromachined silicon bolometers as detectors of soft X-ray, ultraviolet, visible and infrared radiation Sensors and Actuators A-physical. ,vol. 60, pp. 154- 159 ,(1997) , 10.1016/S0924-4247(97)01512-4
A. H. Z. Ahmed, R. N. Tait, Fabrication of a self-absorbing, self-supported complementary metal-oxide-semiconductor compatible micromachined bolometer Journal of Vacuum Science and Technology. ,vol. 22, pp. 842- 846 ,(2004) , 10.1116/1.1722404
Dong Liang, Yue Rui-Feng, Liu Li-Tian, Characterization of Uncooled Poly SiGe Microbolometer for Infrared Detection Chinese Physics Letters. ,vol. 20, pp. 770- 773 ,(2003) , 10.1088/0256-307X/20/5/351
Piet De Moor, Spyros Kavadias, Vladimir N. Leonov, Chris A. Van Hoof, Process development of fast and sensitive polySiGe microbolometer arrays Photodetectors : materials and devices. Conference. ,vol. 4288, pp. 94- 99 ,(2001) , 10.1117/12.429397