Process development of fast and sensitive polySiGe microbolometer arrays

摘要: Extremely thin (50-100nm) polycrystalline silicon germanium (poly SiGe) microbolometers have been realized thanks to structural stiffness enhancement techniques within the pixel and support legs. The technique involves definition of U-shaped profiles using surface micromachining. This approach allows decouple thermal isolation some extent from time constant. result is a faster yet sensitive microbolometer compared its thicker counterparts. Thermal constants between 5 10 ms are achieved in vacuum conductance legs as low radiation limit (3x10-8 W/K). Apart (CMOS compatible) absorber release sacrificial oxide layer, process runs 8' Si CMOS pilot line uses deep submicron stepper capability line. vapor HF does not attack pixel, or metal interconnect leads yield close equal 100%. Linear arrays small 2D such demonstrated. To protect bolometers an early stage packaging, zero-level (on-chip) flip-chip package based on indent-reflow sealing has developed. window material processed steps multi-chip-module technology.© (2001) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading abstract permitted personal use only.