Epitaxial Growth of (Sr, Ba)Nb2O6 Thin Films by Pulsed Laser Deposition

摘要: Thin films of (Sr, Ba)Nb2O6 (SBN) were prepared on SrTiO3 (100) substrates by a pulsed laser deposition and their crystallographic properties investigated. Epitaxially grown with the c-axis perpendicular to substrate obtained at temperatures higher than 650°C in an oxygen atmosphere (containing 8% O3) 3 mTorr. An X-ray phi scan analysis indicates that have antiphase domains c-plane relationship is SBN //SrTiO3 . The lattice mismatch between film less 1%, which contributes desirable crystalline quality films. A smooth surface roughness Rms=0.8 nm was controlling morphology initial growth layer two-step deposition.