Influence of MgO substrate miscut on domain structure of pulsed laser deposited SrxBa1−xNb2O6 as characterized by x-ray diffraction and spectroscopic ellipsometry

摘要: Pulsed laser deposition has been used to grow highly oriented SrxBa1−xNb2O6 (SBN:x) on (001)MgO and miscut MgO (2° off 001 toward 100) in the presence of a pulsed O2 jet. The target stoichiometry was SBN:52±1.5%, but films grown at 700 °C were cation deficient had final composition SBN:61±1.5%. Visually, specular, spectroscopic ellipsometry measurements showed they absorbing, requiring short anneal make them fully transparent. Pole figure analysis indicated that thick 626±1 nm film consisted characteristic antiphase domain structure SBN, four domains found thin 185±1 nm film. However, formation these additional suppressed 165±1 nm MgO. Spectroscopic have made measure surface interface roughness, thickness, as well refractive index extinction coefficient films.