作者: Marc D. Levenson
DOI: 10.1143/JJAP.33.6765
关键词:
摘要: Various types of phase shifting mask, off-axis illumination, optical proximity correction and other innovations promise to extend the lifetime i-line (365 nm) deep ultra-violet (DUV) lithography technologies into subhalf-micron era. No single innovation seems likely produce a patterning paradigm that lasts more than one generation, but engineering solutions using combinations new options familiar may make technology viable well next century.