SrTiO3‐Based Resistive Switching Memory Device with Graphene Nanoribbon Electrodes
作者： Cheol Hwan Kim , Yoonho Ahn , Jong Yeog Son
DOI: 10.1111/JACE.14024
关键词:
摘要: We demonstrate the resistive switching behavior on SrTiO3 (STO) (100) single-crystalline substrate with graphene nanoribbon (GNR) electrodes. The planar GNR was fabricated STO by means of dip-pen nanolithography and polystyrene-etching techniques. nanogap for electrodes induced electroburning, which performed applying a voltage across GNR. nanoscale GNR/STO/GNR RRAM device showed bipolar low set/reset voltages current as well good retention characteristics. might be attributed to roles oxygen vacancies, originating from intrinsic characteristics dislocation single crystal.
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