Physicochemical effects of seed structure and composition on optimized TSV fill performance

摘要: Microstrike and Electroless conformal seed deposition are low-temperature alternatives to iPVD for filling high aspect ratio vias. In this paper we compare electrochemical physical measurements of seeds deposited by iPVD, processes their TSV results. Measurement methods include RDE, AFM, SIMS, XRD, FIB SEM. For seed, performance depends mainly on large-scale surface topography along the via sidewall, which affects adsorption behavior. This observation is consistent with previous reports. process, optimization chemistry waveform provides continuous nucleation throughout adequate void-free filling. Filling time 10∶1 A/R vias was similar suggesting that equivalent quality. Cu impurities cause a significant potential rise (induction) low steady-state potential. Chemical or compensation changing current increases plating rate be close baseline while providing sufficient suppression prevent voids.