Growth by Vacuum Evaporation, Sputtering, Molecular Beam Epitaxy and Chemical Vapor Deposition
作者： R. Cadoret
DOI: 10.1007/978-94-009-7870-6_17
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摘要: Thickness homogeneity and chemical purity of thin film deposition by vacuum evaporation with point planar sources are discussed. High pressure, low assisted sputtering methods (deposition atoms having 10 to 103 times higher energy than evaporated atoms) presented their relative advantages The discussion molecular beam epitaxy is focused mainly on surface kinetic studies performed gain more insight the GaAs process. Finally, vapor {100| in a Ga - AsC13 H2 system {lll|Si from silane diluted hydrogen at reduced pressures analysed basis reactions.
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