Surface temperature measurements using pyrometry during excimer laser pulsed etching of silicon in a Cl2 environment
作者： T.S. Baller , J.C.S. Kools , J. Dieleman
DOI: 10.1016/0169-4332(90)90159-W
关键词:
摘要: Abstract It appears from angular-resolved time-of-flight (TOF) studies, performed on the products desorbed during nanosecond pulsed excimer laser etching of silicon in a low pressure chlorine environment, that mean energy particles is dependent surface coverage (θ). Monte-Carlo simulations desorption process have shown all results TOF experiments can be explained by assuming maximum temperature Ts reached pulse depends θ. For fluence used, varies 1600 K at θ ≈ 0.01 up to 3500 full monolayer coverage. In this study we present time-resolved emission spectrometry irradiation, order elucidate role mechanism. The irradiated spot measured as function and interpreted thermal temperature. obtained measurements good agreement with derived experiments. influence adsorbed discussed light possible models.
harvard.edu
elsevier.com
sci-hub.se 参考文章(8)
S. de Unamuno, E. Fogarassy, A thermal description of the melting of c- and a-silicon under pulsed excimer lasers Applied Surface Science. ,vol. 36, pp. 1- 11 ,(1989) , 10.1016/0169-4332(89)90894-5
M. Kemmler, G. Wartmann, D. von der Linde, Thermal radiation from laser heated silicon and pyrometric temperature measurements Applied Physics Letters. ,vol. 45, pp. 159- 161 ,(1984) , 10.1063/1.95153
T.S. Baller, J. Dieleman, Nanosecond excimer laser-enhanced chemical etching Applied Surface Science. ,vol. 43, pp. 409- 415 ,(1989) , 10.1016/0169-4332(89)90248-1
J. Boulmer, B. Bourguignon, J.P. Budin, D. Debarre, Time of flight study of low pressure laser etching of silicon by chlorine Applied Surface Science. ,vol. 43, pp. 424- 431 ,(1989) , 10.1016/0169-4332(89)90250-X
F Overtoom, I W Boyd, DUAL-WAVELENGTH TEMPERATURE MEASUREMENT OF LASER-HEATED SILICON Journal of Physics E: Scientific Instruments. ,vol. 21, pp. 550- 553 ,(1988) , 10.1088/0022-3735/21/6/005
P. Baeri, S. U. Campisano, G. Foti, E. Rimini, A melting model for pulsing‐laser annealing of implanted semiconductors Journal of Applied Physics. ,vol. 50, pp. 788- 797 ,(1979) , 10.1063/1.326046
G. E. Jellison, D. H. Lowndes, D. N. Mashburn, R. F. Wood, Time-resolved reflectivity measurements on silicon and germanium using a pulsed excimer KrF laser heating beam Physical Review B. ,vol. 34, pp. 2407- 2415 ,(1986) , 10.1103/PHYSREVB.34.2407
T.S. Baller, J. van Zwol, S.T. de Zwart, G.N.A. van Veen, H. Fell, J. Dieleman, Angle Resolved Time-of-Flight Measurements of the Excimer Laser Induced Etching of Silicon in a Chlorine Environment MRS Proceedings. ,vol. 129, pp. 299- ,(1988) , 10.1557/PROC-129-299