Glass-forming ability and rigidity percolation in SeTePb lone-pair semiconductors
作者： Pankaj Sharma
DOI: 10.1007/S00339-016-9960-7
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摘要: Correlating the various physical parameters of known semiconductors and pointing properties new ones, a number have been employed recently with different levels success. Taking this into account an attempt has made to correlate Pb-doped Se–Te lone-pair semiconductors. The small band gap large Bohr radius lead (Pb) containing assist them specific optical, electrical thermal properties. like constraints, lone pair electron, heat atomization, density, compactness, free volume percentage analyzed in terms mean coordination for (Se90Te10)100−x Pb x (x = 0, 4, 8, 12, 16, 20, 24). compositions determined theoretically, obtained results are very well explained cohesive energy, electronegativity average single bond energy.
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