Influence of compositional variation on the optical and morphological properties of Gesbnd Sbsbnd Se films for optoelectronics application
作者： N. Dulgheru , M. Gartner , M. Anastasescu , M. Stoica , M. Nicolescu
DOI: 10.1016/J.INFRARED.2018.08.008
关键词:
摘要: Abstract Thin films of GexSb40-xSe60 (x = 15, 20, 25, 27, 32 and 35 at.%) were deposited on quartz by vacuum thermal evaporation the pre-synthesized parental glasses powders. By spectroscopic ellipsometry complex refractive index values are determined in 0.20–33 μm spectral range. The optical band gap single oscillator energies established as a function Ge content average coordination number Z. In (0.85–3.5) μm range possess about 80% transmission. Infrared ellipsometric Raman studies identified Se homopolar bonds, oxygen hydrogen related impurity bonds heteropolar Sb chemical bonds. Neutron- X-ray Diffraction data coupled with Reverse Monte Carlo simulations support results reproducing cell units cross-linked Atomic force microscopic imaging confirmed smooth surfaces low RMS roughness (
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