Classical and quantum hall effect measurements in GaInNAs/GaAs quantum wells
作者： Sukru Ardali , Engin Tiras
DOI: 10.1016/J.PHYSE.2012.11.007
关键词:
摘要: Abstract We have performed magneto-transport experiments in modulation-doped Ga 0.7 In 0.3 N y As 1− /GaAs quantum wells with nitrogen mole fractions 0.4%, 1.0% and 1.5%. Classical magnetotransport (resistivity low-field Hall effect) measurements been the temperatures between 1.8 275 K, while effect 47 K magnetic fields up to 11 T. The variations of mobility carrier density temperature obtained from classical measurements. results are used investigate scattering mechanisms electrons wells. It is shown that alloy disorder major mechanism at investigated temperatures. oscillations resistance determine density, effective mass, transport mobility, Fermi energy two-dimensional (2D) in-plane mass 2D increases when fraction increased =0.004 0.015. found for these parameters good agreement those determined Shubnikov-de Haas magnetoresistance.
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