Method and apparatus for preventing overerasure in a flash cell
作者： John E. Turner
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摘要: A method and apparatus for erasing Flash EP - ROM cells that avoids overerasure is provided. high impedance device placed between the drain of cell high-voltage supply used to erase cell. As soon as enters onset depletion begins conduct, most voltage dropped across de vice, leaving insufficient potential Fowler Nordheim tunneling continue. The process thus self limiting. can be on a chain or array EPROM cells, with erasure stopping when any one con ducts. Bias differences read modes assure first goes into not in normal operation.
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